VBM165R18 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VBM165R18

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 34 nS

Cossⓘ - Capacitancia de salida: 456 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.34 typ Ohm

Encapsulados: TO220AB

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VBM165R18 datasheet

 ..1. Size:1061K  cn vbsemi
 vbm165r18.pdf pdf_icon

VBM165R18

VBM165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.34 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche en

 6.1. Size:1406K  cn vbsemi
 vbm165r10 vbmb165r10 vbl165r10.pdf pdf_icon

VBM165R18

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener

 6.2. Size:1339K  cn vbsemi
 vbm165r12 vbmb165r12 vbl165r12.pdf pdf_icon

VBM165R18

VBM165R12 / VBMB165R12/ VBL165R12 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS)

 6.3. Size:1284K  cn vbsemi
 vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf pdf_icon

VBM165R18

VBM165R10 / VBMB165R10 VBE165R10 / VBFB165R10 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy

MOSTRAR MÁS

Otros transistores... VBM165R10, VBMB165R10, VBE165R10, VBFB165R10, VBL165R10, VBM165R12, VBMB165R12, VBL165R12, IRF4905, VBM165R20S, VBMB165R20S, VBP165R20S, VBL165R20S, VBM1680, VBM16R02, VBMB16R02, VBE16R02