VBM165R18 Specs and Replacement
Type Designator: VBM165R18
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 456 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 typ Ohm
Package: TO220AB
VBM165R18 substitution
- MOSFET ⓘ Cross-Reference Search
VBM165R18 datasheet
vbm165r18.pdf
VBM165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.34 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche en... See More ⇒
vbm165r10 vbmb165r10 vbl165r10.pdf
VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener... See More ⇒
vbm165r12 vbmb165r12 vbl165r12.pdf
VBM165R12 / VBMB165R12/ VBL165R12 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS) ... See More ⇒
vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf
VBM165R10 / VBMB165R10 VBE165R10 / VBFB165R10 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy... See More ⇒
Detailed specifications: VBM165R10, VBMB165R10, VBE165R10, VBFB165R10, VBL165R10, VBM165R12, VBMB165R12, VBL165R12, IRF4905, VBM165R20S, VBMB165R20S, VBP165R20S, VBL165R20S, VBM1680, VBM16R02, VBMB16R02, VBE16R02
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