FDC2512 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDC2512
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.425 Ohm
   Paquete / Cubierta: SSOT6

Búsqueda de reemplazo de MOSFET FDC2512

FDC2512 Datasheet (PDF)

..1. Size:242K fairchild semi
fdc2512.pdf

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

..2. Size:238K fairchild semi
fdc2512 f095.pdf

..3. Size:578K onsemi
fdc2512.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..4. Size:2033K kexin
fdc2512.pdf

SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512 (KDC2512)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.11 6D DD 2 5DG 3 4S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

..5. Size:2616K cn vbsemi
fdc2512.pdf

FDC2512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

0.1. Size:284K kexin
fdc2512-hf.pdf

SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512-HF( )SOT-23-6 +0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31 +0.01-0.01+0.2-0.1 D DD DG S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 150V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: