October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512 (KDC2512)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.11 6D DD 2 5DG 3 4S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

FDC2512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512-HF( )SOT-23-6 +0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31 +0.01-0.01+0.2-0.1 D DD DG S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 150V