FDC2512. Аналоги и основные параметры
Наименование производителя: FDC2512
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 22 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.425 Ohm
Тип корпуса: SSOT6
Аналог (замена) для FDC2512
FDC2512 даташит
fdc2512.pdf
October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
fdc2512 f095.pdf
October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
fdc2512.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdc2512.pdf
SMD Type MOSFET N-Channel Enhancement MOSFET FDC2512 (KDC2512) ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 Features VDS (V) = 150V 6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 D D D 2 5 D G 3 4 S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
Другие MOSFET... FDB8870F085 , STU30N01 , FDB8880 , STU30L01A , FDB8896 , STU30L01 , FDB8896F085 , STU309DH , AOD4184A , FDC2612 , STU309D , FDC3512 , FDC3535 , FDC3601N , STU307S , FDC3612 , STU3055L .
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Список транзисторов
Обновления
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