FDC2512
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC2512
Marking Code: .252'
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 22
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.425
Ohm
Package:
SSOT6
FDC2512
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC2512
Datasheet (PDF)
..1. Size:242K fairchild semi
fdc2512.pdf
October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
..2. Size:238K fairchild semi
fdc2512 f095.pdf
October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized
..3. Size:578K onsemi
fdc2512.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..4. Size:2033K kexin
fdc2512.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512 (KDC2512)( )SOT-23-6 Unit: mm+0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.11 6D DD 2 5DG 3 4S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
..5. Size:2616K cn vbsemi
fdc2512.pdf
FDC2512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D
0.1. Size:284K kexin
fdc2512-hf.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET FDC2512-HF( )SOT-23-6 +0.10.4 -0.1 Features VDS (V) = 150V6 5 4 ID = 1.4A (VGS = 10V) RDS(ON) 425m (VGS = 10V) RDS(ON) 475m (VGS = 6V)2 31 +0.01-0.01+0.2-0.1 D DD DG S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 150V
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