FDC3512 Datasheet. Equivalente

 ..1. Size:130K  fairchild semi
 fdc3512 f095.pdf

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 ..2. Size:133K  fairchild semi
 fdc3512.pdf

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 ..3. Size:222K  onsemi
 fdc3512.pdf

FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremely specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON)

 ..4. Size:843K  cn vbsemi
 fdc3512.pdf

FDC3512 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS D

 9.1. Size:243K  fairchild semi
 fdc3535.pdf

June 2010 FDC3535 P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and High performanc

 9.2. Size:1493K  onsemi
 fdc3535.pdf

April 2015 FDC3535 P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 m Features General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 A been optimized for rDS(on), switching performance and High performance trenc