FDC3512 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremelyspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON)

FDC3512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

June 2010FDC3535P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 Abeen optimized for rDS(on), switching performance and High performanc

April 2015FDC3535 P-Channel Power Trench MOSFET-80 V, -2.1 A, 183 mFeatures General DescriptionMax rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 Abeen optimized for rDS(on), switching performance and High performance trenc