FDC3512 MOSFET Datasheet: N-Ch, 80V, 3A. Full specification with pinout and replacement list

FDC3512 Specs and Replacement

   Type Designator: FDC3512
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
   Package: SSOT6

FDC3512 substitution

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FDC3512 datasheet

..1. Size:130K fairchild semi
fdc3512 f095.pdf pdf_icon

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for... See More ⇒

..2. Size:133K fairchild semi
fdc3512.pdf pdf_icon

..3. Size:222K onsemi
fdc3512.pdf pdf_icon

FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremely specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON) ... See More ⇒

..4. Size:843K cn vbsemi
fdc3512.pdf pdf_icon

FDC3512 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.095 at VGS = 10 V 3.2 Low On-Resistance 100 4.2 nC 0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TSOP-6 APPLICATIONS D... See More ⇒