FDC3512
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDC3512
Marking Code: .352'
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 58
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077
Ohm
Package:
SSOT6
FDC3512
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDC3512
Datasheet (PDF)
..1. Size:130K fairchild semi
fdc3512 f095.pdf
February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for
..2. Size:133K fairchild semi
fdc3512.pdf
February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for
..3. Size:222K onsemi
fdc3512.pdf
FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremelyspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON)
..4. Size:843K cn vbsemi
fdc3512.pdf
FDC3512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D
9.1. Size:243K fairchild semi
fdc3535.pdf
June 2010FDC3535P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 Abeen optimized for rDS(on), switching performance and High performanc
9.2. Size:1493K onsemi
fdc3535.pdf
April 2015FDC3535 P-Channel Power Trench MOSFET-80 V, -2.1 A, 183 mFeatures General DescriptionMax rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 Abeen optimized for rDS(on), switching performance and High performance trenc
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