Справочник MOSFET. FDC3512

 

FDC3512 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDC3512
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 58 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.077 Ohm
   Тип корпуса: SSOT6

 Аналог (замена) для FDC3512

 

 

FDC3512 Datasheet (PDF)

 ..1. Size:130K  fairchild semi
 fdc3512 f095.pdf

FDC3512 FDC3512

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 ..2. Size:133K  fairchild semi
 fdc3512.pdf

FDC3512 FDC3512

February 2002 FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 88 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for

 ..3. Size:222K  onsemi
 fdc3512.pdf

FDC3512 FDC3512

FDC3512 Features 80V N-Channel PowerTrench MOSFET 3.0 A, 80 V RDS(ON) = 77 m @ VGS = 10 V General Description RDS(ON) = 88 m @ VGS = 6 V This N-Channel MOSFET has been designed High performance trench technology for extremelyspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional low RDS(ON)

 ..4. Size:843K  cn vbsemi
 fdc3512.pdf

FDC3512 FDC3512

FDC3512www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.095 at VGS = 10 V 3.2 Low On-Resistance100 4.2 nC0.105 at VGS = 4.5 V 3.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS D

 9.1. Size:243K  fairchild semi
 fdc3535.pdf

FDC3512 FDC3512

June 2010FDC3535P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mFeatures General Description Max rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 Abeen optimized for rDS(on), switching performance and High performanc

 9.2. Size:1493K  onsemi
 fdc3535.pdf

FDC3512 FDC3512

April 2015FDC3535 P-Channel Power Trench MOSFET-80 V, -2.1 A, 183 mFeatures General DescriptionMax rDS(on) = 183 m at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 233 m at VGS = -4.5 V, ID = -1.9 Abeen optimized for rDS(on), switching performance and High performance trenc

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