FDC3612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

SMD Type MOSFETN-Channel MOSFETFDC3612 (KDC3612)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Max

SMD Type MOSFETN-Channel MOSFETFDC3612-HF( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum Ra

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

August 2001FDC3601NDual N-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 VThese N-Channel 100V specified MOSFETs areRDS(ON)= 550 m @ VGS = 6.0 Vproduced using Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored Low gate charge (3.7nC typical)to minimize on-state

November 2007FDC365PtmP-Channel PowerTrench MOSFET -35V, -4.3A, 55mFeatures General Description Max rDS(on) = 55m at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2Adeliver low rDS(on) and optimized Bvdss capability to offer RoHS C

FDC3601NDual N-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 VThese N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 Vproduced using ON Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical)to minimize on-state resistance and ye