FDC3612 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDC3612
   Código: .362'
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SSOT6

Búsqueda de reemplazo de MOSFET FDC3612

FDC3612 Datasheet (PDF)

..1. Size:134K fairchild semi
fdc3612.pdf

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

..2. Size:174K fairchild semi
fdc3612 f095.pdf

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

..3. Size:418K onsemi
fdc3612.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

..4. Size:1553K kexin
fdc3612.pdf

SMD Type MOSFETN-Channel MOSFETFDC3612 (KDC3612)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Max

0.1. Size:1684K kexin
fdc3612-hf.pdf

SMD Type MOSFETN-Channel MOSFETFDC3612-HF( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum Ra

8.1. Size:171K fairchild semi
fdc3616n.pdf

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

9.1. Size:90K fairchild semi
fdc3601n.pdf

August 2001FDC3601NDual N-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 VThese N-Channel 100V specified MOSFETs areRDS(ON)= 550 m @ VGS = 6.0 Vproduced using Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored Low gate charge (3.7nC typical)to minimize on-state

9.2. Size:302K fairchild semi
fdc365p.pdf

November 2007FDC365PtmP-Channel PowerTrench MOSFET -35V, -4.3A, 55mFeatures General Description Max rDS(on) = 55m at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2Adeliver low rDS(on) and optimized Bvdss capability to offer RoHS C

9.3. Size:304K onsemi
fdc3601n.pdf

FDC3601NDual N-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 VThese N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 Vproduced using ON Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical)to minimize on-state resistance and ye

Otros transistores... STU309DH , FDC2512 , FDC2612 , STU309D , FDC3512 , FDC3535 , FDC3601N , STU307S , IRF3205 , STU3055L , FDC365P , FDC5614P , FDC5661N-F085 , FDC602P , FDC604P , FDC606P , FDC608PZ .

Liste

Recientemente añadidas las descripciónes de los transistores: