FDC3612 - описание и поиск аналогов

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

SMD Type MOSFET N-Channel MOSFET FDC3612 (KDC3612) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V) 2 3 1 Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Max

SMD Type MOSFET N-Channel MOSFET FDC3612-HF ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V) 2 3 1 Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Maximum Ra

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrench MOSFET Features General Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V These N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 V produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical) to minimize on-state

November 2007 FDC365P tm P-Channel PowerTrench MOSFET -35V, -4.3A, 55m Features General Description Max rDS(on) = 55m at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2A deliver low rDS(on) and optimized Bvdss capability to offer RoHS C

FDC3601N Dual N-Channel 100V Specified PowerTrench MOSFET Features General Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V These N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 V produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical) to minimize on-state resistance and ye