FDC3612 Datasheet and Replacement

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

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SMD Type MOSFETN-Channel MOSFETFDC3612 (KDC3612)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Max

SMD Type MOSFETN-Channel MOSFETFDC3612-HF( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V)2 31 Fast switching speed +0.020.15 -0.02+0.01-0.01+0.2-0.11 61.Drain 4.Source2 5 2.Drain 5.Drain3.Gate 6.Drain3 4 Absolute Maximum Ra

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

August 2001FDC3601NDual N-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 VThese N-Channel 100V specified MOSFETs areRDS(ON)= 550 m @ VGS = 6.0 Vproduced using Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored Low gate charge (3.7nC typical)to minimize on-state

November 2007FDC365PtmP-Channel PowerTrench MOSFET -35V, -4.3A, 55mFeatures General Description Max rDS(on) = 55m at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2Adeliver low rDS(on) and optimized Bvdss capability to offer RoHS C

FDC3601NDual N-Channel 100V Specified PowerTrenchMOSFETFeaturesGeneral Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 VThese N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 Vproduced using ON Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical)to minimize on-state resistance and ye