VBZE12P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBZE12P10
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de VBZE12P10 MOSFET
VBZE12P10 Datasheet (PDF)
vbze12p10.pdf

VBZE12P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.180 at VGS = - 10 V - 7.5 TrenchFET Power MOSFET- 100 110.200 at VGS = - 4.5 V - 6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Con
vbze12n06.pdf

VBZE12N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.095at VGS = 10 V 16 Material categorization:60 19.8For definitions of compliance please see0.110 at VGS = 4.5 V 13TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor Dr
vbze12n03.pdf

VBZE12N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.014at VGS = 10 V 4030 28nC0.020at VGS = 4.5 V 35APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU
vbze12n10.pdf

VBZE12N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100at VGS = 10 V0.090 17 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
Otros transistores... VBZE06N03 , VBZE100N02 , VBZE100N03 , VBZE100P03 , VBZE10N20 , VBZE12N03 , VBZE12N06 , VBZE12N10 , 5N65 , VBZE15N03 , VBZE15N10 , VBZE16N05 , VBZE20N03 , VBZE20N06 , VBZE20N10 , VBZE20N20 , VBZE20P03 .
History: NCEAP026N10T | 2SK3899-ZK | PHX27NQ11T | DMT3020LSD | 2SK2129 | NCEAP40ND40AG | STF20NK50Z
History: NCEAP026N10T | 2SK3899-ZK | PHX27NQ11T | DMT3020LSD | 2SK2129 | NCEAP40ND40AG | STF20NK50Z



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