VBZE12P10 Specs and Replacement

Type Designator: VBZE12P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO252

VBZE12P10 substitution

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VBZE12P10 datasheet

 ..1. Size:834K  cn vbsemi
 vbze12p10.pdf pdf_icon

VBZE12P10

VBZE12P10 www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.180 at VGS = - 10 V - 7.5 TrenchFET Power MOSFET - 100 11 0.200 at VGS = - 4.5 V - 6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Con... See More ⇒

 8.1. Size:1633K  cn vbsemi
 vbze12n06.pdf pdf_icon

VBZE12P10

VBZE12N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.095at VGS = 10 V 16 Material categorization 60 19.8 For definitions of compliance please see 0.110 at VGS = 4.5 V 13 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor Dr... See More ⇒

 8.2. Size:2307K  cn vbsemi
 vbze12n03.pdf pdf_icon

VBZE12P10

VBZE12N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.014at VGS = 10 V 40 30 28nC 0.020at VGS = 4.5 V 35 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU... See More ⇒

 8.3. Size:1444K  cn vbsemi
 vbze12n10.pdf pdf_icon

VBZE12P10

VBZE12N10 www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 at VGS = 10 V 0.090 17 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS... See More ⇒

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Detailed specifications: VBZE06N03, VBZE100N02, VBZE100N03, VBZE100P03, VBZE10N20, VBZE12N03, VBZE12N06, VBZE12N10, 2SK3568, VBZE15N03, VBZE15N10, VBZE16N05, VBZE20N03, VBZE20N06, VBZE20N10, VBZE20N20, VBZE20P03

Keywords - VBZE12P10 MOSFET specs

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