VBZFB40P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VBZFB40P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 38.5 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 26 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 130(max) pF
Resistencia entre drenaje y fuente RDS(on): 0.048 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET VBZFB40P06
VBZFB40P06 Datasheet (PDF)
vbzfb40p06.pdf
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VBZFB40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURES-60 VVDS Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 48 mDefinition TrenchFET Power MOSFET57RDS(on),typ VGS=4.5V m 100 % UIS TestedAID -30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge ConverterTO-251 DC/DC Converter for
vbzfb40p04.pdf
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VBZFB40P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURES-40 V Halogen-free According to IEC 61249-2-21VDSDefinitionRDS(on),typ VGS=10V 10 m TrenchFET Power MOSFETRDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC-55 AID APPLICATIONS Power Switch DC/DC ConvertersSTO-251GDG D STop View
vbzfb40p03.pdf
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VBZFB40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFET-30 VVDSFEATURES Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 18 mDefinitionRDS(on),typ VGS=4.5V 22 m TrenchFET Power MOSFETAID -35 100 % Rg TestedAPPLICATIONS Load SwitchTO-251 Battery SwitchSGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS TA = 25
vbzfb40n06.pdf
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VBZFB40N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.036 100 % Rg and UIS TestedID (A)25 Compliant to RoHS Directive 2002/95/ECConfiguration SingleAPPLICATIONS Power Supply- S
vbzfb40n03.pdf
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VBZFB40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free15RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET20RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHS40ID ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D
vbzfb40n10.pdf
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VBZFB40N10www.VBsemi.comN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-TabG D SSTop ViewN-
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