VBZFB40P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: VBZFB40P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 26 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 130(max) pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: TO251
VBZFB40P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VBZFB40P06 Datasheet (PDF)
vbzfb40p06.pdf
VBZFB40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURES-60 VVDS Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 48 mDefinition TrenchFET Power MOSFET57RDS(on),typ VGS=4.5V m 100 % UIS TestedAID -30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge ConverterTO-251 DC/DC Converter for
vbzfb40p04.pdf
VBZFB40P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURES-40 V Halogen-free According to IEC 61249-2-21VDSDefinitionRDS(on),typ VGS=10V 10 m TrenchFET Power MOSFETRDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC-55 AID APPLICATIONS Power Switch DC/DC ConvertersSTO-251GDG D STop View
vbzfb40p03.pdf
VBZFB40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFET-30 VVDSFEATURES Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 18 mDefinitionRDS(on),typ VGS=4.5V 22 m TrenchFET Power MOSFETAID -35 100 % Rg TestedAPPLICATIONS Load SwitchTO-251 Battery SwitchSGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS TA = 25
vbzfb40n06.pdf
VBZFB40N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.036 100 % Rg and UIS TestedID (A)25 Compliant to RoHS Directive 2002/95/ECConfiguration SingleAPPLICATIONS Power Supply- S
vbzfb40n03.pdf
VBZFB40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free15RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET20RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHS40ID ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D
vbzfb40n10.pdf
VBZFB40N10www.VBsemi.comN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-TabG D SSTop ViewN-
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
