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VBZFB40P06 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VBZFB40P06
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 38.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 130(max) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.048 Ohm
   Тип корпуса: TO251

 Аналог (замена) для VBZFB40P06

 

 

VBZFB40P06 Datasheet (PDF)

 ..1. Size:1179K  cn vbsemi
 vbzfb40p06.pdf

VBZFB40P06 VBZFB40P06

VBZFB40P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURES-60 VVDS Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 48 mDefinition TrenchFET Power MOSFET57RDS(on),typ VGS=4.5V m 100 % UIS TestedAID -30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge ConverterTO-251 DC/DC Converter for

 5.1. Size:999K  cn vbsemi
 vbzfb40p04.pdf

VBZFB40P06 VBZFB40P06

VBZFB40P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURES-40 V Halogen-free According to IEC 61249-2-21VDSDefinitionRDS(on),typ VGS=10V 10 m TrenchFET Power MOSFETRDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC-55 AID APPLICATIONS Power Switch DC/DC ConvertersSTO-251GDG D STop View

 5.2. Size:920K  cn vbsemi
 vbzfb40p03.pdf

VBZFB40P06 VBZFB40P06

VBZFB40P03www.VBsemi.comP-Channel 30-V (D-S) MOSFET-30 VVDSFEATURES Halogen-free According to IEC 61249-2-21RDS(on),typ VGS=10V 18 mDefinitionRDS(on),typ VGS=4.5V 22 m TrenchFET Power MOSFETAID -35 100 % Rg TestedAPPLICATIONS Load SwitchTO-251 Battery SwitchSGDP-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS TA = 25

 7.1. Size:821K  cn vbsemi
 vbzfb40n06.pdf

VBZFB40P06 VBZFB40P06

VBZFB40N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.032 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.036 100 % Rg and UIS TestedID (A)25 Compliant to RoHS Directive 2002/95/ECConfiguration SingleAPPLICATIONS Power Supply- S

 7.2. Size:1270K  cn vbsemi
 vbzfb40n03.pdf

VBZFB40P06 VBZFB40P06

VBZFB40N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS 30V Halogen-free15RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET20RDS(on) VGS = 4.5 V m 100 % Rg TestedRoHS40ID ACOMPLIANT 100 % UIS TestedConfiguration SingleAPPLICATIONSTO-251 DC/DC ConversionD- System PowerGSN-Channel MOSFET G D

 7.3. Size:644K  cn vbsemi
 vbzfb40n10.pdf

VBZFB40P06 VBZFB40P06

VBZFB40N10www.VBsemi.comN-Channel 200V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-251APPLICATIONS Primary Side SwitchDDrain Connected to GDrain-TabG D SSTop ViewN-

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History: MSF16N50 | MRF1507

 

 
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