ZXMP10A17GTA Todos los transistores

 

ZXMP10A17GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP10A17GTA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.200(typ) Ohm
   Paquete / Cubierta: SOT223
 

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ZXMP10A17GTA Datasheet (PDF)

 ..1. Size:762K  cn vbsemi
 zxmp10a17gta.pdf pdf_icon

ZXMP10A17GTA

ZXMP10A17GTAwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Applicatio

 4.1. Size:636K  diodes
 zxmp10a17g.pdf pdf_icon

ZXMP10A17GTA

A Product Line ofDiodes IncorporatedZXMP10A17G100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10

 5.1. Size:699K  diodes
 zxmp10a17e6 zxmp10a17e6ta.pdf pdf_icon

ZXMP10A17GTA

A Product Line ofDiodes IncorporatedZXMP10A17E6100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1

 5.2. Size:639K  diodes
 zxmp10a17e6q.pdf pdf_icon

ZXMP10A17GTA

ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

MOSTRAR MÁS

Otros transistores... WPM2015-3-TR , WPM2341A-3-TR , XP132A1275SR , XP161A11A1PR , XP161A1355PR , XP202A0003PR , ZXMC6A09DN8T , ZXMN4A06GT , 5N50 , ZXMP6A18DN8TA , NCE0102 , NCE0103M , NCE0103Y , NCE0106R , NCE0106Z , NCE0110AK , NCE0110AS .

History: TX216521M6R | VBZQA50P03 | NDS331N-NL | 2N7002KT | IPP039N04LG | ALD1116DA | SSW65R190S2

 

 
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