All MOSFET. ZXMP10A17GTA Datasheet

 

ZXMP10A17GTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMP10A17GTA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17.5 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.200(typ) Ohm
   Package: SOT223

 ZXMP10A17GTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMP10A17GTA Datasheet (PDF)

 ..1. Size:762K  cn vbsemi
zxmp10a17gta.pdf

ZXMP10A17GTA
ZXMP10A17GTA

ZXMP10A17GTAwww.VBsemi.twP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) 100% Rg and UIS Tested0.200 at VGS = - 10 V - 3.0- 100 13.2 nC0.230 at VGS = - 6 V - 2.4APPLICATIONSAvailable Active Clamp in Intermediate DC/DC Power SuppliesS H-Bridge High Side Switch forLighting Applicatio

 4.1. Size:636K  diodes
zxmp10a17g.pdf

ZXMP10A17GTA
ZXMP10A17GTA

A Product Line ofDiodes IncorporatedZXMP10A17G100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10

 5.1. Size:699K  diodes
zxmp10a17e6 zxmp10a17e6ta.pdf

ZXMP10A17GTA
ZXMP10A17GTA

A Product Line ofDiodes IncorporatedZXMP10A17E6100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1

 5.2. Size:639K  diodes
zxmp10a17e6q.pdf

ZXMP10A17GTA
ZXMP10A17GTA

ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 5.3. Size:678K  diodes
zxmp10a17k.pdf

ZXMP10A17GTA
ZXMP10A17GTA

A Product Line ofDiodes IncorporatedZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS= -10V -3.9A Qualified to AEC-Q101 Standards for High Reliability -1

 5.4. Size:600K  diodes
zxmp10a17e6.pdf

ZXMP10A17GTA
ZXMP10A17GTA

ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q

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