NCE2010E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE2010E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: TSSOP8

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NCE2010E datasheet

 ..1. Size:298K  ncepower
 nce2010e.pdf pdf_icon

NCE2010E

Pb Free Product http //www.ncepower.com NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.1. Size:371K  ncepower
 nce2012.pdf pdf_icon

NCE2010E

Pb Free Product http //www.ncepower.com NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 8.2. Size:691K  ncepower
 nce2013j.pdf pdf_icon

NCE2010E

http //www.ncepower.com NCE2013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features Schematic diagram V = 20V,I = 13A DS D R

 8.3. Size:413K  ncepower
 nce2014es.pdf pdf_icon

NCE2010E

Pb Free Product http //www.ncepower.com NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE12P09S, NCE1502R, NCE1503S, NCE1540K, NCE1550, NCE1570, NCE2003, NCE2007N, IRF1010E, NCE2030, NCE2030K, NCE2060K, NCE20P45Q, NCE20P70G, NCE2301, NCE2302, NCE2303