NCE2010E MOSFET Datasheet: N-Ch, 20V, 7A. Full specification with pinout and replacement list

NCE2010E Specs and Replacement

   Type Designator: NCE2010E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TSSOP8

NCE2010E substitution

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NCE2010E datasheet

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Pb Free Product http //www.ncepower.com NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

8.1. Size:371K ncepower
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Pb Free Product http //www.ncepower.com NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON) ... See More ⇒

8.2. Size:691K ncepower
nce2013j.pdf pdf_icon

http //www.ncepower.com NCE2013J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features Schematic diagram V = 20V,I = 13A DS D R ... See More ⇒

8.3. Size:413K ncepower
nce2014es.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON) ... See More ⇒

Detailed specifications: NCE12P09S , NCE1502R , NCE1503S , NCE1540K , NCE1550 , NCE1570 , NCE2003 , NCE2007N , IRF1010E , NCE2030 , NCE2030K , NCE2060K , NCE20P45Q , NCE20P70G , NCE2301 , NCE2302 , NCE2303 .