FDC6420C Todos los transistores

FDC6420C www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V

June 2009 FDC642P_F085 P-Channel PowerTrench MOSFET -20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6

January 2010 FDC642P Single P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 m Features General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 A This P-Channel 2.5V specified MOSFET is produced using Fairchild s advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 A especially tailored to minimize on-state

MOSFET P-Channel, POWERTRENCH -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P www.onsemi.com Features Typ RDS(on) = 52.5 mW at VGS = -4.5 V, ID = -4 A Typ RDS(on) = 75.3 mW at VGS = -2.5 V, ID = -3.2 A Fast Switching Speed Low Gate Charge (6.9 nC Typical) TSOT23 6-Lead High Performance Trench Technology for Extremely Low RDS(on) CASE 419BL SUPERSOTt-6 P

SMD Type MOSFET P-Channel MOSFET FDC642P (KDC642P) ( ) SOT-23-6 Unit mm +0.1 0.4 -0.1 6 5 4 Features VDS (V) =-20V ID =-4 A RDS(ON) 65m (VGS =-4.5V) 2 3 1 +0.02 RDS(ON) 100m (VGS =-2.5V) 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D D 6 1 D D 5 2 G S 4 3 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Vol