FDC6420C Todos los transistores

 

FDC6420C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDC6420C
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3(2.2) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7(12) nS
   Cossⓘ - Capacitancia de salida: 82(88) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07(0.125) Ohm
   Paquete / Cubierta: SSOT6
     - Selección de transistores por parámetros

 

FDC6420C Datasheet (PDF)

 ..1. Size:102K  fairchild semi
fdc6420c.pdf pdf_icon

FDC6420C

September 2001FDC6420C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 95 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 ..2. Size:1544K  cn vbsemi
fdc6420c.pdf pdf_icon

FDC6420C

FDC6420Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

 8.1. Size:241K  fairchild semi
fdc642p f085.pdf pdf_icon

FDC6420C

June 2009FDC642P_F085P-Channel PowerTrench MOSFET-20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6

 8.2. Size:266K  fairchild semi
fdc642p.pdf pdf_icon

FDC6420C

January 2010FDC642PSingle P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 mFeatures General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 AThis P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 Aespecially tailored to minimize on-state

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History: MDU1532SURH | FTK5N80DD | CSD85312Q3E | AP98T03GP-HF | BUK7616-55A

 

 
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