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FDC6420C Datasheet and Replacement


   Type Designator: FDC6420C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3(2.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7(12) nS
   Cossⓘ - Output Capacitance: 82(88) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07(0.125) Ohm
   Package: SSOT6
 

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FDC6420C Datasheet (PDF)

 ..1. Size:102K  fairchild semi
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FDC6420C

September 2001FDC6420C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 95 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 ..2. Size:1544K  cn vbsemi
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FDC6420C

FDC6420Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

 8.1. Size:241K  fairchild semi
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FDC6420C

June 2009FDC642P_F085P-Channel PowerTrench MOSFET-20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6

 8.2. Size:266K  fairchild semi
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FDC6420C

January 2010FDC642PSingle P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 mFeatures General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 AThis P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 Aespecially tailored to minimize on-state

Datasheet: FDC6327C , STU17L01 , FDC6333C , STU16L01 , STU15N20 , FDC637BNZ , FDC638APZ , FDC6401N , 2SK3878 , STU15L01 , FDC642P , FDC642PF085 , FDC655BN , STU1530PL , FDC658AP , FDC855N , STU12L01 .

History: DMB53D0UDW | IRFBG30 | STU15N20

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