FDC6420C Datasheet and Replacement
Type Designator: FDC6420C
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 0.96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3(2.2) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7(12) nS
Cossⓘ - Output Capacitance: 82(88) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07(0.125) Ohm
Package: SSOT6
FDC6420C substitution
FDC6420C Datasheet (PDF)
fdc6420c.pdf

September 2001FDC6420C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 95 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2
fdc6420c.pdf

FDC6420Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V
fdc642p f085.pdf

June 2009FDC642P_F085P-Channel PowerTrench MOSFET-20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6
fdc642p.pdf

January 2010FDC642PSingle P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 mFeatures General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 AThis P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 Aespecially tailored to minimize on-state
Datasheet: FDC6327C , STU17L01 , FDC6333C , STU16L01 , STU15N20 , FDC637BNZ , FDC638APZ , FDC6401N , 2SK3878 , STU15L01 , FDC642P , FDC642PF085 , FDC655BN , STU1530PL , FDC658AP , FDC855N , STU12L01 .
History: DMB53D0UDW | IRFBG30 | STU15N20
Keywords - FDC6420C MOSFET datasheet
FDC6420C cross reference
FDC6420C equivalent finder
FDC6420C lookup
FDC6420C substitution
FDC6420C replacement
History: DMB53D0UDW | IRFBG30 | STU15N20



LIST
Last Update
MOSFET: DHS052N10B | DHS052N10 | DHS051N10P | DHS046N10I | DHS046N10F | DHS046N10E | DHS046N10D | DHS046N10B | DHS046N10 | DHS030N88I | DHS030N88F | DHS030N88E | DHS030N88 | DHS025N88I | DHS025N88F | DHS025N88E
Popular searches
irf9530 | 2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet | irf530 | 2n3565 | irf530n