FDC6420C MOSFET Datasheet: NP-Ch, 20V, 3(2.2)A. Full specification with pinout and replacement list

FDC6420C Specs and Replacement

Type Designator: FDC6420C

Marking Code: .420'

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3(2.2) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V

Qg ⓘ - Total Gate Charge: 3.3(3.7) nC

tr ⓘ - Rise Time: 7(12) nS

Cossⓘ - Output Capacitance: 82(88) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07(0.125) Ohm

Package: SSOT6

FDC6420C substitution

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FDC6420C datasheet

..1. Size:102K fairchild semi
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..2. Size:1544K cn vbsemi
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FDC6420C www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V... See More ⇒

8.1. Size:241K fairchild semi
fdc642p f085.pdf pdf_icon

June 2009 FDC642P_F085 P-Channel PowerTrench MOSFET -20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6 ... See More ⇒

8.2. Size:266K fairchild semi
fdc642p.pdf pdf_icon

January 2010 FDC642P Single P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 m Features General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 A This P-Channel 2.5V specified MOSFET is produced using Fairchild s advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 A especially tailored to minimize on-state... See More ⇒