Справочник MOSFET. FDC6420C

 

FDC6420C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDC6420C
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 0.96 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3(2.2) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7(12) ns
   Cossⓘ - Выходная емкость: 82(88) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07(0.125) Ohm
   Тип корпуса: SSOT6

 Аналог (замена) для FDC6420C

 

 

FDC6420C Datasheet (PDF)

 ..1. Size:102K  fairchild semi
 fdc6420c.pdf

FDC6420C FDC6420C

September 2001FDC6420C20V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 3.0 A, 20V. RDS(ON) = 70 m @ VGS = 4.5 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 95 m @ VGS = 2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2

 ..2. Size:1544K  cn vbsemi
 fdc6420c.pdf

FDC6420C FDC6420C

FDC6420Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

 8.1. Size:241K  fairchild semi
 fdc642p f085.pdf

FDC6420C FDC6420C

June 2009FDC642P_F085P-Channel PowerTrench MOSFET-20V, -4A, 100m Applications Features Load switch Typ rDS(on) = 52.5m at VGS = -4.5V, ID = -4A Battery protection Typ rDS(on) = 75.3m at VGS = -2.5V, ID = -3.2A Power management Fast switching speed Low gate charge(6.9nC typical) High performance trench technology for extremely low rDS(on) SuperSOTTM-6

 8.2. Size:266K  fairchild semi
 fdc642p.pdf

FDC6420C FDC6420C

January 2010FDC642PSingle P-Channel 2.5V Specified PowerTrench MOSFET -20 V, -4.0 A, 65 mFeatures General Description Max rDS(on) = 65 m at VGS = -4.5 V, ID = -4.0 AThis P-Channel 2.5V specified MOSFET is produced using Fairchilds advanced PowerTrench process that has been Max rDS(on) = 100 m at VGS = -2.5 V, ID = -3.2 Aespecially tailored to minimize on-state

 8.3. Size:1310K  onsemi
 fdc642p-f085 fdc642p-f085p.pdf

FDC6420C FDC6420C

MOSFET P-Channel,POWERTRENCH-20 V, -4 A, 100 mWFDC642P-F085,FDC642P-F085Pwww.onsemi.comFeatures Typ RDS(on) = 52.5 mW at VGS = -4.5 V, ID = -4 A Typ RDS(on) = 75.3 mW at VGS = -2.5 V, ID = -3.2 A Fast Switching Speed Low Gate Charge (6.9 nC Typical)TSOT23 6-Lead High Performance Trench Technology for Extremely Low RDS(on)CASE 419BL SUPERSOTt-6 P

 8.4. Size:1112K  onsemi
 fdc642p.pdf

FDC6420C FDC6420C

 8.5. Size:1570K  kexin
 fdc642p.pdf

FDC6420C FDC6420C

SMD Type MOSFETP-Channel MOSFETFDC642P (KDC642P)( )SOT-23-6 Unit:mm+0.10.4 -0.16 5 4 Features VDS (V) =-20V ID =-4 A RDS(ON) 65m (VGS =-4.5V)2 31+0.02 RDS(ON) 100m (VGS =-2.5V) 0.15 -0.02+0.01-0.01+0.2-0.1D D61D D52G S43 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Vol

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