NCE30H11BK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30H11BK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V

Qgⓘ - Carga de la puerta: 66.3 nC

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 451 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de NCE30H11BK MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE30H11BK datasheet

 ..1. Size:391K  ncepower
 nce30h11bk.pdf pdf_icon

NCE30H11BK

NCE30H11BK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

 5.1. Size:632K  ncepower
 nce30h11bg.pdf pdf_icon

NCE30H11BK

http //www.ncepower.com NCE30H11BG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =30V,I =110A DS D R =2.3m (typical) @ V =10V DS(ON) GS R =3.8m (typical) @ V =4.5V DS(ON) GS Excellen

 6.1. Size:371K  ncepower
 nce30h11g.pdf pdf_icon

NCE30H11BK

Pb Free Product http //www.ncepower.com NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

 6.2. Size:384K  ncepower
 nce30h11k.pdf pdf_icon

NCE30H11BK

http //www.ncepower.com NCE30H11K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE3080K, NCE3090K, NCE3095G, NCE3095K, NCE30D0808J, NCE30D2519K, NCE30H10AK, NCE30H10K, STP65NF06, NCE30H11K, NCE30H12, NCE30H14K, NCE30H15, NCE30H15K, NCE30H29D, NCE30ND07AS, NCE30ND07S