NCE30H11BK - параметры транзистора MOSFET, его аналоги, datasheet

NCE30H11BK Datasheet (PDF)

..1. Size:391K ncepower
nce30h11bk.pdf pdf_icon

NCE30H11BKhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4

5.1. Size:632K ncepower
nce30h11bg.pdf pdf_icon

http://www.ncepower.com NCE30H11BGNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H11BG uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =30V,I =110ADS DR =2.3m (typical) @ V =10VDS(ON) GSR =3.8m (typical) @ V =4.5VDS(ON) GS Excellen

6.1. Size:371K ncepower
nce30h11g.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE30H11GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON)

6.2. Size:384K ncepower
nce30h11k.pdf pdf_icon

http://www.ncepower.com NCE30H11KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON)

Другие MOSFET... NCE3080K , NCE3090K , NCE3095G , NCE3095K , NCE30D0808J , NCE30D2519K , NCE30H10AK , NCE30H10K , IRFZ48N , NCE30H11K , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D , NCE30ND07AS , NCE30ND07S .