NCE30H11BK Specs and Replacement

Type Designator: NCE30H11BK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 451 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO252

NCE30H11BK substitution

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NCE30H11BK datasheet

 ..1. Size:391K  ncepower
 nce30h11bk.pdf pdf_icon

NCE30H11BK

NCE30H11BK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic diagram RDS(ON) =2.6m (typical) @ VGS=10V RDS(ON) =4.5m (typical) @ VGS=4... See More ⇒

 5.1. Size:632K  ncepower
 nce30h11bg.pdf pdf_icon

NCE30H11BK

http //www.ncepower.com NCE30H11BG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11BG uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features V =30V,I =110A DS D R =2.3m (typical) @ V =10V DS(ON) GS R =3.8m (typical) @ V =4.5V DS(ON) GS Excellen... See More ⇒

 6.1. Size:371K  ncepower
 nce30h11g.pdf pdf_icon

NCE30H11BK

Pb Free Product http //www.ncepower.com NCE30H11G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A Schematic Diagram RDS(ON) ... See More ⇒

 6.2. Size:384K  ncepower
 nce30h11k.pdf pdf_icon

NCE30H11BK

http //www.ncepower.com NCE30H11K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =110A RDS(ON) ... See More ⇒

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Detailed specifications: NCE3080K, NCE3090K, NCE3095G, NCE3095K, NCE30D0808J, NCE30D2519K, NCE30H10AK, NCE30H10K, STP65NF06, NCE30H11K, NCE30H12, NCE30H14K, NCE30H15, NCE30H15K, NCE30H29D, NCE30ND07AS, NCE30ND07S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.