NCE30H15K Todos los transistores

 

NCE30H15K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30H15K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 130 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 150 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 38 nC
   Tiempo de subida (tr): 24 nS
   Conductancia de drenaje-sustrato (Cd): 1135 pF
   Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
   Paquete / Cubierta: TO252

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NCE30H15K Datasheet (PDF)

 ..1. Size:441K  ncepower
nce30h15k.pdf

NCE30H15K NCE30H15K

Pb Free Producthttp://www.ncepower.com NCE30H15KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 6.1. Size:754K  ncepower
nce30h15bg.pdf

NCE30H15K NCE30H15K

http://www.ncepower.com NCE30H15BGNCE N-Channel Enhancement Mode Power MOSFETGeneral Features V =30V,I =150ADS DDescriptionR

 6.2. Size:723K  ncepower
nce30h15b.pdf

NCE30H15K NCE30H15K

Pb Free Producthttp://www.ncepower.comNCE30H15BNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15B uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

 6.3. Size:693K  ncepower
nce30h15bk.pdf

NCE30H15K NCE30H15K

Pb Free Producthttp://www.ncepower.comNCE30H15BKNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30H15BK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =150ADS DR

 6.4. Size:398K  ncepower
nce30h15.pdf

NCE30H15K NCE30H15K

Pb Free Producthttp://www.ncepower.com NCE30H15NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

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