NCE30H15K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE30H15K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 1135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO252

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NCE30H15K datasheet

 ..1. Size:441K  ncepower
nce30h15k.pdf pdf_icon

NCE30H15K

Pb Free Product http //www.ncepower.com NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

 6.1. Size:754K  ncepower
nce30h15bg.pdf pdf_icon

NCE30H15K

http //www.ncepower.com NCE30H15BG NCE N-Channel Enhancement Mode Power MOSFET General Features V =30V,I =150A DS D Description R

 6.2. Size:723K  ncepower
nce30h15b.pdf pdf_icon

NCE30H15K

Pb Free Product http //www.ncepower.com NCE30H15B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15B uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R

 6.3. Size:693K  ncepower
nce30h15bk.pdf pdf_icon

NCE30H15K

Pb Free Product http //www.ncepower.com NCE30H15BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R

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