NCE30H15K Specs and Replacement
Type Designator: NCE30H15K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 1135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
NCE30H15K substitution
- MOSFET ⓘ Cross-Reference Search
NCE30H15K datasheet
nce30h15k.pdf
Pb Free Product http //www.ncepower.com NCE30H15K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON) ... See More ⇒
nce30h15bg.pdf
http //www.ncepower.com NCE30H15BG NCE N-Channel Enhancement Mode Power MOSFET General Features V =30V,I =150A DS D Description R ... See More ⇒
nce30h15b.pdf
Pb Free Product http //www.ncepower.com NCE30H15B NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15B uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R ... See More ⇒
nce30h15bk.pdf
Pb Free Product http //www.ncepower.com NCE30H15BK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H15BK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =150A DS D R ... See More ⇒
Detailed specifications: NCE30D2519K, NCE30H10AK, NCE30H10K, NCE30H11BK, NCE30H11K, NCE30H12, NCE30H14K, NCE30H15, IRF830, NCE30H29D, NCE30ND07AS, NCE30ND07S, NCE30ND09S, NCE30NP07S, NCE30NP1812K, NCE30P12S, NCE30P15S
Keywords - NCE30H15K MOSFET specs
NCE30H15K cross reference
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