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NCE30ND07S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE30ND07S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: SOP8
 

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NCE30ND07S Datasheet (PDF)

 ..1. Size:356K  ncepower
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NCE30ND07S

Pb Free ProductNCE30ND07Shttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON)

 5.1. Size:368K  ncepower
 nce30nd07as.pdf pdf_icon

NCE30ND07S

NCE30ND07AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON)

 5.2. Size:292K  ncepower
 nce30nd07bs.pdf pdf_icon

NCE30ND07S

NCE30ND07BShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON)

 6.1. Size:384K  ncepower
 nce30nd09s.pdf pdf_icon

NCE30ND07S

Pb Free Producthttp://www.ncepower.com NCE30ND09SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE30H11BK , NCE30H11K , NCE30H12 , NCE30H14K , NCE30H15 , NCE30H15K , NCE30H29D , NCE30ND07AS , 8N60 , NCE30ND09S , NCE30NP07S , NCE30NP1812K , NCE30P12S , NCE30P15S , NCE30P20Q , NCE30P25S , NCE30P28Q .

History: SIS402DN | IRLU2705PBF | STB22NS25ZT4 | IRF7313PBF-1

 

 
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