NCE30ND07S Specs and Replacement

Type Designator: NCE30ND07S

Marking Code: 30ND07S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V

Qg ⓘ - Total Gate Charge: 7.2 nC

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SOP8

NCE30ND07S substitution

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NCE30ND07S datasheet

 ..1. Size:356K  ncepower
nce30nd07s.pdf pdf_icon

NCE30ND07S

Pb Free Product NCE30ND07S http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDS =30V,ID =7A RDS(ON) ... See More ⇒

 5.1. Size:368K  ncepower
nce30nd07as.pdf pdf_icon

NCE30ND07S

NCE30ND07AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =7A RDS(ON) ... See More ⇒

 5.2. Size:292K  ncepower
nce30nd07bs.pdf pdf_icon

NCE30ND07S

NCE30ND07BS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND07BS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =6.5A RDS(ON) ... See More ⇒

 6.1. Size:384K  ncepower
nce30nd09s.pdf pdf_icon

NCE30ND07S

Pb Free Product http //www.ncepower.com NCE30ND09S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS =30V,ID =9A RDS(ON) ... See More ⇒

Detailed specifications: NCE30H11BK, NCE30H11K, NCE30H12, NCE30H14K, NCE30H15, NCE30H15K, NCE30H29D, NCE30ND07AS, IRFB7545, NCE30ND09S, NCE30NP07S, NCE30NP1812K, NCE30P12S, NCE30P15S, NCE30P20Q, NCE30P25S, NCE30P28Q

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.