NCE4009S Todos los transistores

 

NCE4009S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE4009S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 109 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: SOP8
 

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NCE4009S Datasheet (PDF)

 ..1. Size:368K  ncepower
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NCE4009S

Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

 8.1. Size:656K  ncepower
nce4005.pdf pdf_icon

NCE4009S

http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @

 8.2. Size:696K  ncepower
nce4003a.pdf pdf_icon

NCE4009S

http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m

 8.3. Size:681K  ncepower
nce4003.pdf pdf_icon

NCE4009S

http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @

Otros transistores... NCE3401 , NCE3404Y , NCE3406N , NCE3407 , NCE3407AY , NCE3415 , NCE3416 , NCE3420 , IRF1404 , NCE4012S , NCE4060I , NCE4060K , NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I .

History: WPMD3002 | SFG10R08BF

 

 
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