NCE4009S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE4009S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 109 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: SOP8

 Búsqueda de reemplazo de NCE4009S MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCE4009S datasheet

 ..1. Size:368K  ncepower
 nce4009s.pdf pdf_icon

NCE4009S

Pb Free Product http //www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

 8.1. Size:656K  ncepower
 nce4005.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4005 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4005 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =5A DS D R = 22m @ V =10V(Typ) DS(ON) GS R = 36m @

 8.2. Size:696K  ncepower
 nce4003a.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4003A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003A uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 32m @ V =10V(Typ) DS(ON) GS R = 43m

 8.3. Size:681K  ncepower
 nce4003.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 33m @ V =10V(Typ) DS(ON) GS R = 52m @

MOSTRAR MÁS

Otros transistores... NCE3401, NCE3404Y, NCE3406N, NCE3407, NCE3407AY, NCE3415, NCE3416, NCE3420, IRF1404, NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D, NCE4080K, NCE40H12, NCE40H12I