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NCE4009S Spec and Replacement


   Type Designator: NCE4009S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP8

 NCE4009S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE4009S Specs

 ..1. Size:368K  ncepower
nce4009s.pdf pdf_icon

NCE4009S

Pb Free Product http //www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4... See More ⇒

 8.1. Size:656K  ncepower
nce4005.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4005 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4005 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =5A DS D R = 22m @ V =10V(Typ) DS(ON) GS R = 36m @... See More ⇒

 8.2. Size:696K  ncepower
nce4003a.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4003A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003A uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 32m @ V =10V(Typ) DS(ON) GS R = 43m ... See More ⇒

 8.3. Size:681K  ncepower
nce4003.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 33m @ V =10V(Typ) DS(ON) GS R = 52m @... See More ⇒

Detailed specifications: NCE3401 , NCE3404Y , NCE3406N , NCE3407 , NCE3407AY , NCE3415 , NCE3416 , NCE3420 , IRF1404 , NCE4012S , NCE4060I , NCE4060K , NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I .

Keywords - NCE4009S MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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