NCE4009S MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE4009S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.9 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 109 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: SOP8
NCE4009S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE4009S Datasheet (PDF)
nce4009s.pdf
Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4
nce4005.pdf
http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @
nce4003a.pdf
http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m
nce4003.pdf
http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @
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