NCE4009S - параметры транзистора MOSFET, его аналоги, datasheet

NCE4009S Datasheet (PDF)

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Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

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http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @

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http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m

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http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @

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