NCE4009S - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCE4009S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 109 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: SOP8
Аналог (замена) для NCE4009S
NCE4009S Datasheet (PDF)
nce4009s.pdf

Pb Free Producthttp://www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4
nce4005.pdf

http://www.ncepower.comNCE4005NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4005 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =5ADS DR = 22m @ V =10V(Typ)DS(ON) GSR = 36m @
nce4003a.pdf

http://www.ncepower.comNCE4003ANCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003A uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 32m @ V =10V(Typ)DS(ON) GSR = 43m
nce4003.pdf

http://www.ncepower.comNCE4003NCE N-Channel Enhancement Mode Power MOSFETDDescriptionThe NCE4003 uses advanced trench technology to provideGexcellent R , low gate charge. This device is suitable forDS(ON)use as a Battery protection or in other switching application.SGeneral FeaturesSchematic Diagram V =40V,I =3ADS DR = 33m @ V =10V(Typ)DS(ON) GSR = 52m @
Другие MOSFET... NCE3401 , NCE3404Y , NCE3406N , NCE3407 , NCE3407AY , NCE3415 , NCE3416 , NCE3420 , IRF1404 , NCE4012S , NCE4060I , NCE4060K , NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I .
History: JMSH1001NE | JMH65R110APLNFD
History: JMSH1001NE | JMH65R110APLNFD



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