NCE4009S datasheet, аналоги, основные параметры

Наименование производителя: NCE4009S  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

Cossⓘ - Выходная емкость: 109 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm

Тип корпуса: SOP8

  📄📄 Копировать 

Аналог (замена) для NCE4009S

- подборⓘ MOSFET транзистора по параметрам

 

NCE4009S даташит

 ..1. Size:368K  ncepower
 nce4009s.pdf pdf_icon

NCE4009S

Pb Free Product http //www.ncepower.com NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS =4

 8.1. Size:656K  ncepower
 nce4005.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4005 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4005 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =5A DS D R = 22m @ V =10V(Typ) DS(ON) GS R = 36m @

 8.2. Size:696K  ncepower
 nce4003a.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4003A NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003A uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 32m @ V =10V(Typ) DS(ON) GS R = 43m

 8.3. Size:681K  ncepower
 nce4003.pdf pdf_icon

NCE4009S

http //www.ncepower.com NCE4003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE4003 uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S General Features Schematic Diagram V =40V,I =3A DS D R = 33m @ V =10V(Typ) DS(ON) GS R = 52m @

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE3401, NCE3404Y, NCE3406N, NCE3407, NCE3407AY, NCE3415, NCE3416, NCE3420, IRF1404, NCE4012S, NCE4060I, NCE4060K, NCE4080, NCE4080D, NCE4080K, NCE40H12, NCE40H12I