NCE40H29D Todos los transistores

 

NCE40H29D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE40H29D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 290 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 1160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: TO263
 

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NCE40H29D Datasheet (PDF)

 ..1. Size:398K  ncepower
 nce40h29d.pdf pdf_icon

NCE40H29D

Pb Free Producthttp://www.ncepower.com NCE40H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)

 7.1. Size:339K  ncepower
 nce40h25ll.pdf pdf_icon

NCE40H29D

http://www.ncepower.com NCE40H25LLNCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)

 7.2. Size:361K  ncepower
 nce40h21.pdf pdf_icon

NCE40H29D

Pb Free Producthttp://www.ncepower.com NCE40H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)

 7.3. Size:336K  ncepower
 nce40h20a.pdf pdf_icon

NCE40H29D

Pb Free Producthttp://www.ncepower.com NCE40H20ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I , NCE40H12K , NCE40H20A , NCE40H21 , P55NF06 , NCE40ND0812S , NCE40P05S , NCE40P07S , NCE40P13S , NCE40P15K , NCE40P40K , NCE40P40L , NCE40P70K .

History: 25N10G-TN3-R | DH150N12F

 

 
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