NCE40H29D Datasheet and Replacement
Type Designator: NCE40H29D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 290 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 1160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO263
NCE40H29D substitution
NCE40H29D Datasheet (PDF)
nce40h29d.pdf

Pb Free Producthttp://www.ncepower.com NCE40H29DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =290A RDS(ON)
nce40h25ll.pdf

http://www.ncepower.com NCE40H25LLNCE N-Channel Enhancement Mode Power MOSFET General Features Description VDS =40V ,ID =250A The NCE40H25LL uses advanced trench technology and RDS(ON)
nce40h21.pdf

Pb Free Producthttp://www.ncepower.com NCE40H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V ,ID =210A Schematic diagram RDS(ON)
nce40h20a.pdf

Pb Free Producthttp://www.ncepower.com NCE40H20ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H20A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 40V,ID =200A RDS(ON)
Datasheet: NCE4080 , NCE4080D , NCE4080K , NCE40H12 , NCE40H12I , NCE40H12K , NCE40H20A , NCE40H21 , 2SK3878 , NCE40ND0812S , NCE40P05S , NCE40P07S , NCE40P13S , NCE40P15K , NCE40P40K , NCE40P40L , NCE40P70K .
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