NCE4614 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE4614
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: SOP8

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NCE4614 Datasheet (PDF)

..1. Size:531K ncepower
nce4614.pdf

Pb Free Producthttp://www.ncepower.com NCE4614N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4

0.1. Size:1021K ncepower
nce4614b.pdf

http://www.ncepower.comNCE4614BN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614B uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I

0.2. Size:1011K ncepower
nce4614c.pdf

http://www.ncepower.comNCE4614CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614C uses advanced trench technology to provideexcellent R and low gate charge. The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I

8.1. Size:575K ncepower
nce4612sp.pdf

http://www.ncepower.comNCE4612SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescription General FeaturesThe NCE4612SP uses advanced trench technology to provide V =24V,I =6ASSS Sexcellent R , low gate charge and operation with gateSS(ON) 2.5V drivevoltages as low as 2.5V while retaining a 12V V rating. ItGS(MAX) Common-drain typeis ES

8.2. Size:294K ncepower
nce4618sp.pdf

Pb Free Product Halogen Free Compliance http://www.ncepower.com NCE4618SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS

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