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NCE4614 Spec and Replacement


   Type Designator: NCE4614
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SOP8

 NCE4614 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE4614 Specs

 ..1. Size:531K  ncepower
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NCE4614

Pb Free Product http //www.ncepower.com NCE4614 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4... See More ⇒

 0.1. Size:1021K  ncepower
nce4614b.pdf pdf_icon

NCE4614

http //www.ncepower.com NCE4614B N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614B uses advanced trench technology to provide excellent R and low gate charge . The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I... See More ⇒

 0.2. Size:1011K  ncepower
nce4614c.pdf pdf_icon

NCE4614

http //www.ncepower.com NCE4614C N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614C uses advanced trench technology to provide excellent R and low gate charge. The complementary DS(ON) MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channel Schematic diagram General Features N-Channel V =40V,I ... See More ⇒

 8.1. Size:575K  ncepower
nce4612sp.pdf pdf_icon

NCE4614

http //www.ncepower.com NCE4612SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4612SP uses advanced trench technology to provide V =24V,I =6A SSS S excellent R , low gate charge and operation with gate SS(ON) 2.5V drive voltages as low as 2.5V while retaining a 12V V rating. It GS(MAX) Common-drain type is ES... See More ⇒

Detailed specifications: NCE40P07S , NCE40P13S , NCE40P15K , NCE40P40K , NCE40P40L , NCE40P70K , NCE4435 , NCE4606A , IRF4905 , NCE4801 , NCE4963 , NCE55H12 , NCE55P15I , NCE55P15K , NCE55P30 , NCE55P30K , NCE6003 .

Keywords - NCE4614 MOSFET specs

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