NCE4614 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE4614
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 12 nC
Время нарастания (tr): 3 ns
Выходная емкость (Cd): 112 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.019 Ohm
Тип корпуса: SOP8
NCE4614 Datasheet (PDF)
nce4614.pdf
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Pb Free Producthttp://www.ncepower.com NCE4614N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4
nce4614b.pdf
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http://www.ncepower.comNCE4614BN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614B uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
nce4614c.pdf
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http://www.ncepower.comNCE4614CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614C uses advanced trench technology to provideexcellent R and low gate charge. The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I
nce4612sp.pdf
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http://www.ncepower.comNCE4612SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorDescription General FeaturesThe NCE4612SP uses advanced trench technology to provide V =24V,I =6ASSS Sexcellent R , low gate charge and operation with gateSS(ON) 2.5V drivevoltages as low as 2.5V while retaining a 12V V rating. ItGS(MAX) Common-drain typeis ES
nce4618sp.pdf
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Pb Free Product Halogen Free Compliance http://www.ncepower.com NCE4618SPNCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description General Features The NCE4618SP uses advanced trench technology to provide VSSS =20V,IS =6A excellent RSS(ON), low gate charge and operation with gate 2.5V drive voltages as low as 2.5V while retaining a 12V VGS
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