NCE60P50K Todos los transistores

 

NCE60P50K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60P50K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 719 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

NCE60P50K Datasheet (PDF)

 ..1. Size:407K  ncepower
 nce60p50k.pdf pdf_icon

NCE60P50K

Pb Free Producthttp://www.ncepower.com NCE60P50KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 6.1. Size:627K  ncepower
 nce60p50g.pdf pdf_icon

NCE60P50K

http://www.ncepower.comNCE60P50GNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P50G uses advanced trench technology and V =-60V,I =-50ADS Ddesign to provide excellent R with low gate charge .ThisDS(ON)R =23m (typical) @ V =-10VDS(ON) GSdevice is well suited for high current load applications. High density cell design for ultra lo

 6.2. Size:309K  ncepower
 nce60p50.pdf pdf_icon

NCE60P50K

Pb Free Producthttp://www.ncepower.com NCE60P50NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 7.1. Size:303K  ncepower
 nce60p55k.pdf pdf_icon

NCE60P50K

http://www.ncepower.com NCE60P55KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME2306BS-G | NVD14N03R

 

 
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