NCE60P50K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60P50K

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 95 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 719 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: TO252

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NCE60P50K datasheet

 ..1. Size:407K  ncepower
 nce60p50k.pdf pdf_icon

NCE60P50K

Pb Free Product http //www.ncepower.com NCE60P50K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 6.1. Size:627K  ncepower
 nce60p50g.pdf pdf_icon

NCE60P50K

http //www.ncepower.com NCE60P50G NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P50G uses advanced trench technology and V =-60V,I =-50A DS D design to provide excellent R with low gate charge .This DS(ON) R =23m (typical) @ V =-10V DS(ON) GS device is well suited for high current load applications. High density cell design for ultra lo

 6.2. Size:309K  ncepower
 nce60p50.pdf pdf_icon

NCE60P50K

Pb Free Product http //www.ncepower.com NCE60P50 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 7.1. Size:303K  ncepower
 nce60p55k.pdf pdf_icon

NCE60P50K

http //www.ncepower.com NCE60P55K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE60P10K, NCE60P12K, NCE60P14AK, NCE60P16AK, NCE60P18AK, NCE60P20K, NCE60P45K, NCE60P50, 8N60, NCE60P55K, NCE65T180D, NCE65T180, NCE65T180F, NCE65T180T, NCE65T1K2, NCE65T1K2D, NCE65T1K2F