Справочник MOSFET. NCE60P50K

 

NCE60P50K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE60P50K
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 95 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 75 nC
   trⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 719 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO252

 Аналог (замена) для NCE60P50K

 

 

NCE60P50K Datasheet (PDF)

 ..1. Size:407K  ncepower
 nce60p50k.pdf

NCE60P50K NCE60P50K

Pb Free Producthttp://www.ncepower.com NCE60P50KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 6.1. Size:627K  ncepower
 nce60p50g.pdf

NCE60P50K NCE60P50K

http://www.ncepower.comNCE60P50GNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P50G uses advanced trench technology and V =-60V,I =-50ADS Ddesign to provide excellent R with low gate charge .ThisDS(ON)R =23m (typical) @ V =-10VDS(ON) GSdevice is well suited for high current load applications. High density cell design for ultra lo

 6.2. Size:309K  ncepower
 nce60p50.pdf

NCE60P50K NCE60P50K

Pb Free Producthttp://www.ncepower.com NCE60P50NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 7.1. Size:303K  ncepower
 nce60p55k.pdf

NCE60P50K NCE60P50K

http://www.ncepower.com NCE60P55KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

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