All MOSFET. NCE60P50K Datasheet

 

NCE60P50K MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE60P50K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 719 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO252

 NCE60P50K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE60P50K Datasheet (PDF)

 ..1. Size:407K  ncepower
 nce60p50k.pdf

NCE60P50K NCE60P50K

Pb Free Producthttp://www.ncepower.com NCE60P50KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 6.1. Size:627K  ncepower
 nce60p50g.pdf

NCE60P50K NCE60P50K

http://www.ncepower.comNCE60P50GNCE P-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE60P50G uses advanced trench technology and V =-60V,I =-50ADS Ddesign to provide excellent R with low gate charge .ThisDS(ON)R =23m (typical) @ V =-10VDS(ON) GSdevice is well suited for high current load applications. High density cell design for ultra lo

 6.2. Size:309K  ncepower
 nce60p50.pdf

NCE60P50K NCE60P50K

Pb Free Producthttp://www.ncepower.com NCE60P50NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 7.1. Size:303K  ncepower
 nce60p55k.pdf

NCE60P50K NCE60P50K

http://www.ncepower.com NCE60P55KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRF713

 

 
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