NCE65T2K4I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T2K4I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO251

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NCE65T2K4I datasheet

 ..1. Size:457K  ncepower
 nce65t2k4i nce65t2k4k.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:457K  ncepower
 nce65t2k4i.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:457K  ncepower
 nce65t2k4k.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 7.1. Size:612K  ncepower
 nce65t260f.pdf pdf_icon

NCE65T2K4I

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

MOSTRAR MÁS

Otros transistores... NCE65T1K2F, NCE65T1K2K, NCE65T1K2I, NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, EMB04N03H, NCE65T2K4K, NCE65T360D, NCE65T360, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540