NCE65T2K4I. Аналоги и основные параметры

Наименование производителя: NCE65T2K4I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 21 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 8 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm

Тип корпуса: TO251

Аналог (замена) для NCE65T2K4I

- подборⓘ MOSFET транзистора по параметрам

 

NCE65T2K4I даташит

 ..1. Size:457K  ncepower
 nce65t2k4i nce65t2k4k.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:457K  ncepower
 nce65t2k4i.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:457K  ncepower
 nce65t2k4k.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 7.1. Size:612K  ncepower
 nce65t260f.pdf pdf_icon

NCE65T2K4I

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65T1K2F, NCE65T1K2K, NCE65T1K2I, NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, EMB04N03H, NCE65T2K4K, NCE65T360D, NCE65T360, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540