Справочник MOSFET. NCE65T2K4I

 

NCE65T2K4I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65T2K4I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 21 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

NCE65T2K4I Datasheet (PDF)

 ..1. Size:457K  ncepower
nce65t2k4i nce65t2k4k.pdfpdf_icon

NCE65T2K4I

NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:457K  ncepower
nce65t2k4i.pdfpdf_icon

NCE65T2K4I

NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:457K  ncepower
nce65t2k4k.pdfpdf_icon

NCE65T2K4I

NCE65T2K4INCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@Tjmaxjunction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 7.1. Size:612K  ncepower
nce65t260f.pdfpdf_icon

NCE65T2K4I

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: DMN3052LSS | FHF630A

 

 
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