NCE65T2K4I Specs and Replacement

Type Designator: NCE65T2K4I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 8 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO251

NCE65T2K4I substitution

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NCE65T2K4I datasheet

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 nce65t2k4i nce65t2k4k.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 ..2. Size:457K  ncepower
 nce65t2k4i.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 5.1. Size:457K  ncepower
 nce65t2k4k.pdf pdf_icon

NCE65T2K4I

NCE65T2K4I NCE65T2K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 2.2 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 7.1. Size:612K  ncepower
 nce65t260f.pdf pdf_icon

NCE65T2K4I

NCE65T260D,NCE65T260,NCE65T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒

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Detailed specifications: NCE65T1K2F, NCE65T1K2K, NCE65T1K2I, NCE65T260D, NCE65T260, NCE65T260F, NCE65T260I, NCE65T260K, EMB04N03H, NCE65T2K4K, NCE65T360D, NCE65T360, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540

Keywords - NCE65T2K4I MOSFET specs

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