NCE65T540I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65T540I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 37 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de MOSFET NCE65T540I
NCE65T540I Datasheet (PDF)
nce65t540i nce65t540k.pdf
NCE65T540INCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t540i.pdf
NCE65T540INCE65T540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe
nce65t540f nce65t540 nce65t540d.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540d nce65t540 nce65t540f.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540f.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540d.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540k.pdf
NCE65T540INCE65T540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRF1404LPBF
History: IRF1404LPBF
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