NCE65T540I. Аналоги и основные параметры
Наименование производителя: NCE65T540I
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 37 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.54 Ohm
Тип корпуса: TO251
Аналог (замена) для NCE65T540I
- подборⓘ MOSFET транзистора по параметрам
NCE65T540I даташит
nce65t540i nce65t540k.pdf
NCE65T540I NCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce65t540i.pdf
NCE65T540I NCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 8 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe
nce65t540f nce65t540 nce65t540d.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce65t540d nce65t540 nce65t540f.pdf
NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Другие IGBT... NCE65T360D, NCE65T360, NCE65T360F, NCE65T360K, NCE65T360I, NCE65T540D, NCE65T540, NCE65T540F, IRF3205, NCE65T540K, NCE65T680D, NCE65T680, NCE65T680F, NCE65T680I, NCE65T680K, NCE65T900D, NCE65T900
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Список транзисторов
Обновления
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