NCE65T540I MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

NCE65T540I Specs and Replacement

   Type Designator: NCE65T540I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: TO251

NCE65T540I substitution

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NCE65T540I datasheet

..1. Size:489K ncepower
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NCE65T540I NCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri... See More ⇒

..2. Size:1427K ncepower
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NCE65T540I NCE65T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 8 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial powe... See More ⇒

5.1. Size:604K ncepower
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NCE65T540D,NCE65T540,NCE65T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

5.2. Size:604K ncepower
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