NCE65TF099T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65TF099T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 322 W
Tensión drenaje-fuente |Vds|: 650 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 38 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 45 nC
Tiempo de elevación (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 97 pF
Resistencia drenaje-fuente RDS(on): 0.109 Ohm
Empaquetado / Estuche: TO247
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NCE65TF099T Datasheet (PDF)
..1. nce65tf099t.pdf Size:403K _ncepower
NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
4.1. nce65tf099d nce65tf099 nce65tf099f.pdf Size:578K _ncepower
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
6.1. nce65tf068t.pdf Size:400K _ncepower
NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
6.2. nce65tf041t.pdf Size:363K _ncepower
NCE65TF041T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF2807 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .