NCE65TF099T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65TF099T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 322 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 97 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.109 Ohm

Encapsulados: TO247

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NCE65TF099T datasheet

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NCE65TF099T

NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 4.1. Size:1480K  ncepower
 nce65tf099.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 4.2. Size:1480K  ncepower
 nce65tf099d.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 4.3. Size:578K  ncepower
 nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a

MOSTRAR MÁS

Otros transistores... NCE65T900F, NCE65T900I, NCE65T900K, NCE65TF041T, NCE65TF068T, NCE65TF099D, NCE65TF099, NCE65TF099F, 8205A, NCE65TF130D, NCE65TF130, NCE65TF130F, NCE65TF180D, NCE65TF180, NCE65TF180F, NCE65TF180T, NCE65TF360D