NCE65TF099T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE65TF099T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 322 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 38 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 45 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 97 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.109 Ohm
Тип корпуса: TO247
Аналог (замена) для NCE65TF099T
NCE65TF099T Datasheet (PDF)
..1. nce65tf099t.pdf 
Size:403K _ncepower
NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app
4.1. nce65tf099d nce65tf099 nce65tf099f.pdf Size:578K _ncepower
NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a
6.1. nce65tf068t.pdf Size:400K _ncepower
NCE65TF068T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 62 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 53 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
6.2. nce65tf041t.pdf Size:363K _ncepower
NCE65TF041T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction V 650 V DStechnology and design to provide excellent RDS(ON) with low R 36 m DS(ON) TYP.gate charge. This super junction MOSFET fits the industrys ID 75 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF2807 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
