NCE65TF099T - описание и поиск аналогов

 

Аналоги NCE65TF099T. Основные параметры


   Наименование производителя: NCE65TF099T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 322 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 97 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.109 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для NCE65TF099T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE65TF099T даташит

 ..1. Size:403K  ncepower
 nce65tf099t.pdf pdf_icon

NCE65TF099T

NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 4.1. Size:1480K  ncepower
 nce65tf099.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 4.2. Size:1480K  ncepower
 nce65tf099d.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 38 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 4.3. Size:578K  ncepower
 nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 38 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, a

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