All MOSFET. NCE65TF099T Datasheet

 

NCE65TF099T Datasheet and Replacement


   Type Designator: NCE65TF099T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 322 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
   Package: TO247
 
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NCE65TF099T Datasheet (PDF)

 ..1. Size:403K  ncepower
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NCE65TF099T

NCE65TF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 4.1. Size:1480K  ncepower
 nce65tf099.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 4.2. Size:1480K  ncepower
 nce65tf099d.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSjunction technology and design to provide excellent RDS(ON)R 89 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 38 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indu

 4.3. Size:578K  ncepower
 nce65tf099d nce65tf099 nce65tf099f.pdf pdf_icon

NCE65TF099T

NCE65TF099D,NCE65TF099,NCE65TF099F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 89 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 38 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, a

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